Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s.

نویسندگان

  • Wenbin Zhang
  • Cheng Wang
  • Gang Liu
  • Jun Wang
  • Yu Chen
  • Run-Wei Li
چکیده

Linear and hyperbranched poly(azomethine)s (PAMs)-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.

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عنوان ژورنال:
  • Chemical communications

دوره 50 78  شماره 

صفحات  -

تاریخ انتشار 2014